Noise characterization of an AlGaAs interdigitated metal-semiconductor-metal photodetector (MSM-PD)

Author

Parker, James S. ; Bosman, Gijs

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

39

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

1282

Lastpage

1287

Abstract

The noise characterization of an InGaAs interdigitated metal-semiconductor-metal photodetector (MSM-PD) illuminated with 1.3-μm wavelength radiation is presented. The range of frequencies for the noise measurements included is (0.1-100 kHz) and (500 MHz to -1 GHz). A description of the high-frequency measurement setup, as well as the noise spectra for low and high frequencies, is included. While full shot noise was expected at high frequencies, a value of (0.7) times shot noise was found for a bias of 5 V and a value of (0.9) times shot noise was found for biases of 10 and 15 V. A possible explanation for these sub-shot-noise values is presented and discussed

Keywords

III-V semiconductors; electron device noise; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; 0.1 to 100 kHz; 1.3 micron; 5 to 15 V; 500 to 1000 MHz; AlGaAs; MSM-PD; high-frequency measurement setup; interdigitated metal-semiconductor-metal photodetector; noise characterization; noise spectra; semiconductors; shot noise; wavelength; Absorption; Capacitors; Frequency; Indium gallium arsenide; Indium phosphide; Leakage current; Noise measurement; Photodetectors; Schottky barriers; Semiconductor device measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.137305

Filename

137305