Title :
Mobility of strained and dislocated InxGa1-xAs semiconductor material
Author :
Kuhn, Kelin J. ; Darling, Robert B.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
fDate :
6/1/1992 12:00:00 AM
Abstract :
A theoretical investigation of low-field electron transport properties in thick layers of partially strain-relieved lattice-mismatched InxGa1-xAs on GaAs semiconductor material is performed. The results indicate that room-temperature improvements in low-field mobility with increasing indium concentration are possible, but only occur if the density of misfit dislocations can be held below a critical value
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; InxGa1-xAs; InxGa1-xAs-GaAs; density of misfit dislocations; lattice-mismatched; low-field electron transport properties; low-field mobility; semiconductors; strained semiconductor material; Atomic layer deposition; Capacitive sensors; Crystalline materials; Crystallization; Electrons; Gallium arsenide; Indium; Lattices; MESFETs; Semiconductor materials;
Journal_Title :
Electron Devices, IEEE Transactions on
