A new charge-control model for single- and double-heterojunction bipolar transistors

Author

Parikh, Chetan D. ; Lindholm, Fredrik A.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

39

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

1303

Lastpage

1311

Abstract

A new charge-control relation is derived for heterojunction bipolar transistors. The relation is valid for arbitrary doping density profiles and for all levels of injection in the base. It is applicable to both single- and double-heterojunction transistors. The model is an improvement over another recently proposed charge-control model that was valid only for constant doping density and low injection in the base. Large- and small-signal equivalent circuit models are also presented for heterojunction bipolar transistors. Comparisons with numerical and experimental data show excellent agreement

Keywords

heterojunction bipolar transistors; semiconductor device models; DH bipolar transistors; HBT; arbitrary doping density profiles; charge-control model; double-heterojunction bipolar transistors; experimental data; heterojunction bipolar transistors; large-signal equivalent circuit models; small-signal equivalent circuit models; Analytical models; Bipolar transistors; Doping profiles; Electrons; Equivalent circuits; Gallium arsenide; Heterojunction bipolar transistors; Semiconductor process modeling; Thermionic emission; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.137308

Filename

137308