Title :
Light Output Improvement of Oxide-Textured InGaN-Based Light-Emitting Diodes by Bias-Assisted Photoelectrochemical Oxidation With Imprint Technique
Author :
Yeh, C.Y. ; Lai, W.C. ; Hsueh, T.H. ; Yang, Y.Y. ; Sheu, J.K. ; Ringer, S.P. ; Gault, B.
Author_Institution :
Adv. Optoelectron. Technol. Center, Nat. Cheng Kung Univ., Tainan
fDate :
6/1/2009 12:00:00 AM
Abstract :
The improvement of light output power in InGaN-GaN multiple quantum-well (MQW) light-emitting diodes (LEDs) with oxide textural films are observed. The oxide textural films are grown by alternating current bias-assisted photoelectrochemical oxidation with an imprint technique. At an injection current of 20 mA, the light output power of the oxide-textured InGaN-GaN MQW LEDs is 22% higher than that of the conventional LEDs. Relatively low values in leakage current for the oxide-textured are also observed, as compared to the conventional LEDs. This enhancement in the oxide-textured LEDs performance is attributed to the increase in external quantum efficiency by the nanoscale roughness of the convex oxide films and to the passivation in possible leakage paths of the devices.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; leakage currents; light emitting diodes; oxidation; passivation; photochemistry; quantum well devices; wide band gap semiconductors; InGaN-GaN; InGaN-based light-emitting diodes; LED; alternating current; bias-assisted photoelectrochemical oxidation; current 20 mA; external quantum efficiency; imprint technique; leakage current; light output improvement; multiple quantum-well; nanoscale roughness; oxide textural; passivation; Gallium oxide textured; imprint; photoelectrochemical (PEC);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2017206
