• DocumentCode
    1195003
  • Title

    Design of bipolar imaging devices (BASIS): analysis of random noise

  • Author

    Nakamura, Yoshio ; Ohzu, Hayao ; Miyawaki, Mamoru ; Ishizaki, Akira ; Kochi, Tetsunobu ; Ohmi, Tadahiro

  • Author_Institution
    Canon Inc., Kanagawa, Japan
  • Volume
    39
  • Issue
    6
  • fYear
    1992
  • fDate
    6/1/1992 12:00:00 AM
  • Firstpage
    1341
  • Lastpage
    1349
  • Abstract
    A design methodology for a bipolar imaging device, the base-stored image sensor (BASIS), has been established by theoretical analysis and experimental verification for random noise. The random noise in BASIS is dominated by the shot noise in readout and transient reset operation. The theoretical analysis has been carried out by introducing the probability density functions for these operations. The readout noise depends on the base-to-collector junction capacitance Cbc , the emitter common current gain hFE, the storage capacitor CT, and the emitter voltage V E. The reset noise has been confirmed to be given by thermal noise. The theoretical results coincide well with the experimental results obtained by TEG devices. An expression for the S/N ratio has been derived theoretically. It is found that hFE should be made as large as possible and ( Cbc+Cbe) as small as possible to improve the S/N ratio for random noise, where C be is the base-to-emitter junction capacitance
  • Keywords
    electron device noise; image sensors; semiconductor device models; BASIS; S/N ratio; TEG devices; base-stored image sensor; base-to-collector junction capacitance; base-to-emitter junction capacitance; bipolar imaging devices; design methodology; emitter common current gain; emitter voltage; experimental results; probability density functions; random noise; readout noise; reset noise; shot noise; storage capacitor; theoretical results; thermal noise; transient reset operation; Capacitance; Capacitors; Circuit noise; Computed tomography; Design methodology; Image analysis; Semiconductor device noise; Signal to noise ratio; Silicon compounds; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.137313
  • Filename
    137313