DocumentCode
1195003
Title
Design of bipolar imaging devices (BASIS): analysis of random noise
Author
Nakamura, Yoshio ; Ohzu, Hayao ; Miyawaki, Mamoru ; Ishizaki, Akira ; Kochi, Tetsunobu ; Ohmi, Tadahiro
Author_Institution
Canon Inc., Kanagawa, Japan
Volume
39
Issue
6
fYear
1992
fDate
6/1/1992 12:00:00 AM
Firstpage
1341
Lastpage
1349
Abstract
A design methodology for a bipolar imaging device, the base-stored image sensor (BASIS), has been established by theoretical analysis and experimental verification for random noise. The random noise in BASIS is dominated by the shot noise in readout and transient reset operation. The theoretical analysis has been carried out by introducing the probability density functions for these operations. The readout noise depends on the base-to-collector junction capacitance C bc , the emitter common current gain h FE, the storage capacitor C T, and the emitter voltage V E. The reset noise has been confirmed to be given by thermal noise. The theoretical results coincide well with the experimental results obtained by TEG devices. An expression for the S /N ratio has been derived theoretically. It is found that h FE should be made as large as possible and ( C bc+C be) as small as possible to improve the S /N ratio for random noise, where C be is the base-to-emitter junction capacitance
Keywords
electron device noise; image sensors; semiconductor device models; BASIS; S/N ratio; TEG devices; base-stored image sensor; base-to-collector junction capacitance; base-to-emitter junction capacitance; bipolar imaging devices; design methodology; emitter common current gain; emitter voltage; experimental results; probability density functions; random noise; readout noise; reset noise; shot noise; storage capacitor; theoretical results; thermal noise; transient reset operation; Capacitance; Capacitors; Circuit noise; Computed tomography; Design methodology; Image analysis; Semiconductor device noise; Signal to noise ratio; Silicon compounds; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.137313
Filename
137313
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