Title :
A metal-amorphous silicon-germanium alloy Schottky barrier for infrared optoelectronic IC on glass substrate application
Author :
Fang, Y.K. ; Hwang, Sheng-Beng ; Chen, Kuin-Hui ; Liu, Ching-Ru ; Kuo, Lee-Ching
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
6/1/1992 12:00:00 AM
Abstract :
The effects of material and structure parameters on an amorphous-silicon-germanium alloy Schottky barrier diode´s responsivity have been investigated in detail. The effects contradict each other. A compromise is made in selecting parameters for construction of a Si1-xGex:H Schottky barrier for an IR detector. The optimized amorphous-silicon-germanium alloy Schottky diode using x=0.43 alloy with a 900-nm-thick i-layer was found to have a peak at 850 nm with a responsivity of 0.6 A/W under -2-V bias. The diode also has a response time of 33 μs and slight photodegradation. Thus, the diode becomes a candidate for manufacturing the infrared OEIC (optoelectronic integrated circuit) on glass substrate in applications which require size, reproducibility, and low cost more than sensitivity
Keywords :
Ge-Si alloys; Schottky-barrier diodes; amorphous semiconductors; integrated optoelectronics; photodiodes; -2 V; 33 mus; 850 nm; 900 nm; IR detector; OEIC; Schottky barrier diodes; Si1-xGex:H; amorphous Si-Ge alloy; glass substrate; infrared optoelectronic IC; low cost; material parameters; optoelectronic integrated circuit; photodegradation; response time; responsivity; semiconductors; structure parameters; Delay; Germanium silicon alloys; Glass manufacturing; Infrared detectors; Integrated circuit manufacture; Optoelectronic devices; Schottky barriers; Schottky diodes; Silicon alloys; Silicon germanium;
Journal_Title :
Electron Devices, IEEE Transactions on
