DocumentCode
1195099
Title
High-Power Quantum-Dot Superluminescent Diodes With p-Doped Active Region
Author
Rossetti, Marco ; Li, Lianhe ; Fiore, Andrea ; Occhi, Lorenzo ; Vélez, Christian ; Mikhrin, Sergey ; Kovsh, Alexey
Author_Institution
Inst. of Quantum Electron. & Photonics, Ecole Polytech. Fed. de Lausanne
Volume
18
Issue
18
fYear
2006
Firstpage
1946
Lastpage
1948
Abstract
We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Modal gain measurements and light output-current characteristics prove that p-doping is beneficial for achieving higher gain, higher output power, and better temperature stability
Keywords
semiconductor device measurement; semiconductor doping; semiconductor quantum dots; superluminescent diodes; thermal stability; modal gain; p-doping; quantum-dot superluminescent diodes; temperature stability; Doping; Gain measurement; Gallium arsenide; Optical sensors; Power generation; Quantum dots; Stability; Superluminescent diodes; Temperature; Tomography; Gain; optical coherence tomography (OCT); p-doping; quantum dot (QD); superluminescent diode; temperature characteristics;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2006.882303
Filename
1687951
Link To Document