DocumentCode :
1195109
Title :
STM control of noninteger residual charge Q0 on the central electrode of a double-tunnel junction
Author :
Rong, Zhao Yan ; Chang, Alejandro ; Cohen, Lesley F. ; Wolf, E.L.
Author_Institution :
Dept. of Phys., Polytech. Univ., Brooklyn, NY, USA
Volume :
28
Issue :
1
fYear :
1992
fDate :
1/1/1992 12:00:00 AM
Firstpage :
67
Lastpage :
70
Abstract :
In a voltage-biased mesoscopic double-tunnel junction, the Coulomb threshold VC is an e-periodic function of Q 0, the charge on the inner electrode. In the STM work described here, a large Au tip images 100-Å Ag particles deposited on a cleaved BSCCO crystal substrate. Stable double junctions between the tip, the imaged particle, and the substrate are identified by Coulomb staircase I(V)´s. The control of Q 0 is demonstrated by the variation of tip-particle spacing. The parameterization of such results permits a discussion of Q 0 variation mechanisms
Keywords :
bismuth compounds; calcium compounds; electric charge; high-temperature superconductors; quantum interference phenomena; scanning tunnelling microscopy; silver; strontium compounds; superconducting junction devices; superconductive tunnelling; 100 angstroms; Ag-Bi2Sr2CaCu2O8; Au tip; Bi2Sr2CaCu2O8 substrate; Coulomb staircase; Coulomb threshold; STM control; central electrode; cleaved BSCCO crystal substrate; e-periodic function; noninteger residual charge; parameterization; scanning tunnelling microscope; voltage-biased mesoscopic double-tunnel junction; Bismuth compounds; Centralized control; Crystals; Electrodes; Gold; Helium; Silver; Substrates; Surface topography; Voltage control;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.119817
Filename :
119817
Link To Document :
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