Analysis of low signal level characteristics for high-sensitivity CCD charge detector

Author

Ohsawa, Shinji ; Matsunaga, Yoshiyuki

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

39

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

1465

Lastpage

1468

Abstract

Low signal level characteristics for a highly sensitive floating surface amplifier (FSA) have been analyzed using a two-dimensional device simulator. The linearity, within 5% variance of charge/voltage conversion ratio from 0.5 to 4000 signal electrons, has been confirmed with this simulation. This result shows that it is possible to make the charge/voltage conversion ratio under 10 signal electrons linear for an actual amplifier. Furthermore, it is shown to be possible to improve the charge/voltage conversion ratio by a factor of 2 over that of the fabricated device

Keywords

CCD image sensors; capacitance; digital simulation; electronic engineering computing; surface potential; 1D capacitance; charge/voltage conversion ratio; floating surface amplifier; high-sensitivity CCD charge detector; linearity; low signal level characteristics; surface channel potential modulation; two-dimensional device simulator; Analytical models; Charge carrier processes; Charge coupled devices; Circuit simulation; Detectors; Electrons; Image converters; Linearity; Signal analysis; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.137327

Filename

137327