A 200-A/2000-V MOS-GTO with improved cell design

Author

Stoisiek, Michael ; Oppermann, Klaus G. ; Stengl, Reinhard

Author_Institution

Siemens AG, Munich, Germany

Volume

39

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

1521

Lastpage

1528

Abstract

A large-area MOS-controlled thyristor (MOS-GTO) has been realized by introducing a new wafer-scale repair technique. The large-area device has a diameter of 3 cm. It has been contacted with an IC-compatible pressure contact and has been fabricated on a lowly doped n-type substrate suitable for very-high-voltage applications comparable to conventional GTOs. The snubbered and unsnubbered turn-off currents were 400 and 200 A, respectively. The currents could be switched up to a final anode-to-cathode voltage of >1500 V. The unique turn-off capabilities have been achieved by an improved design of the MOS-controlled emitter cell. The main feature of the new cell design is an integrated emitter series resistor, which avoids current filamentation during turn-off. In addition an n⁺ buried layer underneath the source of the MOS-controlled emitter cell has been used to reduce the parasitic action of the MOS part of the emitter cell during the on-state

Keywords

metal-insulator-semiconductor devices; power electronics; thyristors; 200 A; 2000 V; 400 A; IC-compatible pressure contact; MOS-GTO; MOS-controlled emitter cell; anode-to-cathode voltage; cell design; integrated emitter series resistor; large-area MOS-controlled thyristor; lowly doped n-type substrate; n⁺ buried layer; snubbered turn-off current; unsnubbered turn-off currents; very-high-voltage applications; wafer-scale repair technique; Anodes; Insulated gate bipolar transistors; Inverters; MOSFETs; P-n junctions; Resistors; Space technology; Thyristors; Turning; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.137335

Filename

137335