DocumentCode
1195251
Title
New RTD-boostrapped current and voltage references. I. Self-bootstrapped references
Author
Pflueger, Randall J.
Author_Institution
Dept. of Mater. Sci. & Eng., MIT, Cambridge, MA, USA
Volume
41
Issue
11
fYear
1994
fDate
11/1/1994 12:00:00 AM
Firstpage
740
Lastpage
743
Abstract
New current and voltage references are proposed which utilize depletion-mode field effect transistors and resonant tunneling diodes (RTDs) in a self-bootstrapped configuration to take advantage of the ultra-low local transconductance of RTDs and the high output-impedance of cascoded amplifier stages. These references promise improved supply rejection compared with that of the best existing GaAs MESFET voltage references
Keywords
MESFET circuits; bootstrap circuits; reference circuits; resonant tunnelling diodes; GaAs; MESFET; RTD-boostrapped references; cascoded amplifier stages; current references; depletion-mode FET; field effect transistors; resonant tunneling diodes; self-bootstrapped configuration; voltage references; Circuit simulation; FETs; Gallium arsenide; Impedance; MESFET circuits; Materials science and technology; Resistors; Temperature; Transconductance; Voltage;
fLanguage
English
Journal_Title
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
Publisher
ieee
ISSN
1057-7122
Type
jour
DOI
10.1109/81.331527
Filename
331527
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