Title :
New RTD-boostrapped current and voltage references. I. Self-bootstrapped references
Author :
Pflueger, Randall J.
Author_Institution :
Dept. of Mater. Sci. & Eng., MIT, Cambridge, MA, USA
fDate :
11/1/1994 12:00:00 AM
Abstract :
New current and voltage references are proposed which utilize depletion-mode field effect transistors and resonant tunneling diodes (RTDs) in a self-bootstrapped configuration to take advantage of the ultra-low local transconductance of RTDs and the high output-impedance of cascoded amplifier stages. These references promise improved supply rejection compared with that of the best existing GaAs MESFET voltage references
Keywords :
MESFET circuits; bootstrap circuits; reference circuits; resonant tunnelling diodes; GaAs; MESFET; RTD-boostrapped references; cascoded amplifier stages; current references; depletion-mode FET; field effect transistors; resonant tunneling diodes; self-bootstrapped configuration; voltage references; Circuit simulation; FETs; Gallium arsenide; Impedance; MESFET circuits; Materials science and technology; Resistors; Temperature; Transconductance; Voltage;
Journal_Title :
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
