Title :
AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBE
Author :
Brown, April S. ; Mishra, Umesh K. ; Chou, C.S. ; Hooper, C.E. ; Melendes, M.A. ; Thompson, M. ; Larson, L.E. ; Rosenbaum, S.E. ; Delaney, M.J.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
Abstract :
Low-temperature AlInAs buffer layers incorporated in AlInAs-GaInAs HEMT epitaxial layers grown by MBE are discussed. A growth temperature of 150 degrees C followed by a short anneal is shown to eliminate kinks in the device I-V characteristic and sidegating and to reduce the output conductance dramatically.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; AlInAs buffer layers; AlInAs-GaInAs; HEMT; I-V kink elimination; MBE; device I-V characteristic; epitaxial layers; growth temperature; output conductance reduction; semiconductors; short anneal; sidegating elimination; Annealing; Buffer layers; Conductivity; Epitaxial layers; Gallium arsenide; HEMTs; MODFETs; Molecular beam epitaxial growth; Substrates; Temperature;
Journal_Title :
Electron Device Letters, IEEE
