DocumentCode
1195538
Title
Nb-Al-Al2O3-Nb junctions with inductive tuning elements for a very low noise 205-250 GHz heterodyne receiver
Author
Lichtenberger, Arthur W. ; Lea, Dallas M. ; Mattauch, Robert J. ; Lloyd, Frances L.
Author_Institution
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
Volume
40
Issue
5
fYear
1992
fDate
5/1/1992 12:00:00 AM
Firstpage
816
Lastpage
819
Abstract
The authors have developed a Nb-Al-Al2O3-Nb junction fabrication process which allows the use of planar tuning circuits integrated with the junctions. These tuning elements permit the use of junctions with relatively large areas and small current densities with excellent results. Recent measurements have yielded a double sideband receiver noise temperature of less than 50 K from 205 to 240 GHz and 44 K at 230 GHz. The Nb-Al-Al2O3-Nb trilayer technology is being extended to the fabrication of sub-square-micron-area planar junctions for submillimeter wavelengths
Keywords
alumina; aluminium; etching; mixers (circuits); niobium; photolithography; radio receivers; solid-state microwave devices; submillimetre wave devices; superconducting junction devices; tuning; 205 to 240 GHz; Al; Al2O3; Nb-Al-Al2O3-Nb junctions; Nb-AlAl2O3-Nb; SIS mixers; double sideband receiver noise temperature; heterodyne receiver; inductive tuning elements; junction fabrication process; planar tuning circuits; submillimeter wavelengths; trilayer technology; trilevel resist process; very low noise; Capacitance; Circuit optimization; Fabrication; Frequency; Millimeter wave technology; Niobium; Submillimeter wave technology; Superconducting device noise; Superconductivity; Tuning;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.137384
Filename
137384
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