Title :
Modeling of planar varactor frequency multiplier devices with blocking barriers
Author :
Lieneweg, Udo ; Tolmunen, T.J. ; Frerking, Margaret A. ; Maserjian, Joseph
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
5/1/1992 12:00:00 AM
Abstract :
Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. The roles and and limitations of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) gave moderate efficiency but a broad range of power generation, whereas the devices with doped drift regions (BNN) have high efficiency in a narrower power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2 -Si and AlAs-GaAs and means for increasing the power of BNN structures are considered
Keywords :
equivalent circuits; frequency multipliers; semiconductor device models; solid-state microwave devices; varactors; AlAs-GaAs; SiO2-Si; blocking barriers; broad range; doped drift regions; electron velocity saturation; frequency multiplier devices; frequency triplers; high efficiency; narrower power window; planar varactor; power generation; symmetrical C-V curves; undoped drift regions; Electrons; Etching; Frequency; Gallium arsenide; Laboratories; Propulsion; Schottky diodes; Space technology; Submillimeter wave technology; Varactors;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
