Title :
High electron mobility transistor lightwave receiver for broad-band optical transmission system applications
Author :
Walker, S.D. ; Blank, L.C. ; Garnham, R.A. ; Boggis, J.M.
Author_Institution :
British Telecom Res. Lab., Ipswich, UK
fDate :
3/1/1989 12:00:00 AM
Abstract :
The design and construction of a broadband transimpedance lightwave receiver which features packaged, commercially available high-electron-mobility transistors is described. The receiver was constructed on a standard teflon printed circuit board with packaged tailed 30- mu m-diameter germanium avalanche photodiode as photodetector. A sensitivity of -25.5 dBm for 10/sup -9/ bit error rate was achieved at 1.31 mu m with a 5-Gb/s nonreturn-to-zero pseudorandom sequence provided by a commercial data generator and 1:4 analog demultiplexing at the receiver output.<>
Keywords :
avalanche photodiodes; optical communication equipment; receivers; 1.31 micron; 30 micron; Ge; analog demultiplexing; broadband transimpedance lightwave receiver; construction; data generator; design; high-electron-mobility transistors; nonreturn-to-zero pseudorandom sequence; semiconductor; teflon printed circuit board; Avalanche photodiodes; Bit error rate; Demultiplexing; Germanium; HEMTs; MODFETs; Packaging; Photodetectors; Printed circuits; Random sequences;
Journal_Title :
Lightwave Technology, Journal of
