Title :
Application of Transistor Emitter-Open Turn-Off Scheme to High Voltage Power Inverters
Author :
Chen, Dan Y. ; Walden, John P.
Author_Institution :
Department of Electrical Engineering, Virginia Polytechnic Institute, Blacksburg, VA 24061.
fDate :
7/1/1982 12:00:00 AM
Abstract :
A transistor emitter-open turn-off scheme has been implemented in an experimental operating high voltage power inverter. Not only the transistor turn-off speed is greatly increased by using such a turn-off scheme but also the reverse-biased second breakdown phenomenon is eliminated. Therefore the very same device can be fully utilized for higher voltage and higher frequency applications.
Keywords :
Breakdown voltage; Circuits; Diodes; Electric breakdown; FETs; Frequency; Industry Applications Society; Inverters; Power electronics; Power transistors;
Journal_Title :
Industry Applications, IEEE Transactions on
DOI :
10.1109/TIA.1982.4504101
