Title :
Characterisation of InGaAsP/InP ITG-DFB-BCRW lasers with contacted surface grating for λ=1.55 μm
Author :
Rast, A. ; Mühlhoff, A.
Author_Institution :
Lehrstuhl fur Allgemeine Elektrotech. und Angewandte Elektrotech., Tech. Univ. Munchen, Germany
fDate :
10/1/1994 12:00:00 AM
Abstract :
InGaAsP/InP ITG-DFB-BCRW lasers with a substantial simplified fabrication process, made by one-step liquid phase epitaxy (LPE) without corrugation overgrowth, were characterised. A continuous wave (CW) threshold current of 56 mA and a sidemode suppression ratio (SMSR) of 40 dB, as well as a linewidth of 15 MHz, where achieved at room temperature. The 3 dB-modulation bandwidth is in excess of 5 GHz
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser modes; liquid phase epitaxial growth; optical modulation; optical waveguides; semiconductor lasers; 1.55 mum; 5 GHz; 56 mA; InGaAsP-InP; InGaAsP/InP integrated twin guide distibuted feedback bridge contacted ridge waveguide lasers; characterisation; contacted surface grating; continuous wave threshold current; fabrication process; linewidth; modulation bandwidth; one-step liquid phase epitaxy; room temperature; sidemode suppression ratio;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19941338
