Effects of dynamic stressing on nitrided and reoxidized-nitrided chemical-vapor-deposited gate oxides

Author

Hwang, Hyun-Sang ; Ting, Wenchi ; Kwong, Dim-Lee ; Lee, Jack ; Buhrow, Leonard ; Bowling, R. Allen

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

10

Issue

12

fYear

1989

Firstpage

568

Lastpage

570

Abstract

The degradation behaviour of thin (110 AA) nitrided and reoxidized-nitrided chemical-vapor-deposited (CVD) SiO/sub 2/ MOS gate dielectrics under dynamic voltage and current stressing is discussed. Results indicate that dynamic stressing increases charge-to-breakdown Q/sub bd/ and reduces charge trapping and midgap interface state generation within the dielectrics. These improvements, which can be explained by charge detrapping under dynamic stressing, depend on process conditions and the stress duty cycle.<>

Keywords

chemical vapour deposition; dielectric thin films; insulated gate field effect transistors; semiconductor technology; semiconductor-insulator boundaries; 110 A; MOS gate dielectrics; SiO/sub x/N/sub y/ gate dielectrics; charge detrapping; charge-to-breakdown; charge-trapping reduction; degradation behaviour; dynamic stressing; improvements; midgap interface state generation; nitrided CVD oxides; process conditions; reoxidized nitrided CVD oxides; stress duty cycle; Chemical vapor deposition; Circuit testing; Degradation; Dielectric constant; Electron traps; Interface states; Life estimation; Life testing; Thermal stresses; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.43142

Filename

43142