Title :
New capabilities of the CMOS inverter
Author :
Talkhan, Elsayed A.
Author_Institution :
Dept. of Electron. & Commun., Cairo Univ., Giza, Egypt
fDate :
6/1/1988 12:00:00 AM
Abstract :
Capabilities of the CMOS inverter are introduced that are based on the theory that for VTn=|VTn|≃2/3V SS, a third high-impedance (HI) valid logic state is created between the zero and one states. By the generation of a `HALF´ level (=1/2VSS), the inverter can be used as a tristate inverter. Circuit techniques to propagate the HALF level are given. This enables the general design of tertiary logic circuits and possibly tertiary arithmetic circuits. Two application examples are given. Illustrative experiments based on commercial ICs have been carried out, and results that verify the theory are given. This should open the way for digital circuits and applications. Improvements on the HALF propagation are needed which, in addition to the circuit level, may be thought of on the process and/or the device levels
Keywords :
CMOS integrated circuits; integrated logic circuits; logic gates; ternary logic; CMOS inverter; tertiary arithmetic circuits; tertiary logic circuits; tristate inverter; CMOS digital integrated circuits; CMOS logic circuits; CMOS technology; Digital circuits; Hysteresis; Inverters; Lab-on-a-chip; Operational amplifiers; Solid state circuits; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
