Inverted-gate field-effect transistors: novel high-frequency structures

Author

El-Ghazaly, Samir ; Itoh, Tatsuo

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

35

Issue

7

fYear

1988

fDate

7/1/1988 12:00:00 AM

Firstpage

810

Lastpage

817

Abstract

The submicrometer inverted-gate GaAs FET (INGFET), which has its gate on the lower plane of the active layer, is simulated using a two-dimensional computer model with energy-dependent parameters. This device possesses equal input and output reactances, which removes the restriction on the transistor width and greatly reduces the parasitic gate resistance. The characteristics of the INGFET are compared with those of the corresponding conventional coplanar MESFET. The INGFET has a higher current-gain cutoff frequency. A traveling Gunn domain is observed for certain bias combinations. Techniques to suppress this domain are discussed. Another novel inverted-gate structure using a space-charge-injection mechanism is simulated, showing the highest transconductance among all the devices studied here

Keywords

III-V semiconductors; field effect transistors; gallium arsenide; semiconductor device models; solid-state microwave devices; GaAs; INGFET; bias combinations; characteristics; current-gain cutoff frequency; energy-dependent parameters; gate on lower plane; high-frequency structures; input reactance; inverted-gate FET; model; output reactance; parasitic gate resistance; semiconductors; space-charge-injection mechanism; submicron devices; transconductance; transistor width; traveling Gunn domain; two-dimensional computer model; Electrodes; Electrons; FETs; Frequency; Gallium arsenide; MESFETs; Millimeter wave transistors; Radiofrequency amplifiers; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.3330

Filename

3330