Title :
Design and fabrication of a GaAs monolithic operational amplifier
Author :
Katsu, Shin-Ichi ; Kazumura, Masaru ; Kano, Gota
Author_Institution :
Matsushita Electron. Corp., Osaka, Japan
fDate :
7/1/1988 12:00:00 AM
Abstract :
The design and fabrication of the GaAs monolithic operational amplifier are described. The DC gain and frequency characteristics are discussed in detail using an equivalent circuit. The experimentally fabricated chip exhibited a unity-gain frequency of 150 MHz, an open-loop gain of 48 dB, and a common-mode rejection ratio of 63 dB. The amplifier has wide applications in high-speed D/A (digital-to-analog) converter circuits and switched-capacitor filters for video signals
Keywords :
III-V semiconductors; differential amplifiers; field effect integrated circuits; gallium arsenide; high-frequency amplifiers; integrated circuit technology; operational amplifiers; radiofrequency amplifiers; video amplifiers; wideband amplifiers; 150 MHz; 48 dB; D/A converters application; DC gain; GaAs monolithic operational amplifier; VHF; common-mode rejection ratio; design; equivalent circuit; fabrication; frequency characteristics; open-loop gain; semiconductors; switched-capacitor filters; unity-gain frequency; video signals; Bipolar transistors; Differential amplifiers; Equivalent circuits; FETs; Fabrication; Frequency; Gain; Gallium arsenide; Operational amplifiers; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
