Title :
Ultimate scaling limits for high-frequency GaAs MESFETs
Author :
Golio, Michael J.
Author_Institution :
Motorola Gov. Electron. Group, Chandler, AZ, USA
fDate :
7/1/1988 12:00:00 AM
Abstract :
The scaling relationships of GaAs MESFETs are investigated by examining the dimensions and material parameters of devices fabricated over the past 22 years (1966 to 1988). Scaling rules are suggested that will account for the collected data. Extrapolation of the extracted scaling rules to very small geometries along with consideration of basic physical principles, suggests ultimate scaling limits for millimeter-wave GaAs MESFETs
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; reviews; semiconductor device models; semiconductor technology; solid-state microwave devices; EHF; GaAs; MM-waves; basic physical principles; dimensions; material parameters; millimeter-wave GaAs MESFETs; model; scaling relationships; semiconductors; ultimate scaling limits; very small geometries; Computational modeling; Doping; Extrapolation; FETs; Fabrication; Frequency estimation; Gallium arsenide; Geometry; MESFETs; Microwave devices;
Journal_Title :
Electron Devices, IEEE Transactions on
