Title :
Simplified Analytical Model and High Power Characteristics of InGaP/GaAs HBTs at X-Band
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Korean Adv. Inst. of Sci. & Technol. (KAIST), Daejon
fDate :
3/1/2007 12:00:00 AM
Abstract :
Simplified large-signal analysis and high power characterization of InGaP/GaAs heterojunction bipolar transistors (HBTs) at X-band are reported. The simplified analytical model suggested in this work allows a first order prediction of the power performance trends as functions of device physical parameters. The solution to nonlinear equations governing the large signal behavior of the transistor is found by an iterative approach. The impact of different large signal parameters on the power performance of HBTs has been analyzed. Under class B operation, a 10-finger 2times20mum2 HBT at VCE= 10V achieves a maximum output power of 1.08W (5.4W/mm) with power-added efficiency of 44%
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; iterative methods; microwave bipolar transistors; nonlinear equations; 1.08 W; 10 V; 44 percent; 8 to 12 GHz; InGaP-GaAs; X-band HBT; device physical parameters; first order prediction; heterojunction bipolar transistors; high power characteristics; iterative approach; large-signal analysis; nonlinear equations; power density; power performance; simplified analytical model; Analytical models; Costs; Cutoff frequency; Gallium arsenide; Gold; Heterojunction bipolar transistors; Nonlinear equations; Performance analysis; Signal analysis; Voltage; Analytical model; InGaP heterojunction bipolar transistors (HBTs); X-band; large-signal parameters; power density;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.890490
