Title :
Semiconductor 1.55 μm laser source with gigabit/second integrated electroabsorptive modulator
Author :
Zhang, L.M. ; Carroll, J.E.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fDate :
11/1/1994 12:00:00 AM
Abstract :
A 1.55 μm laser source with low chirp and high speed can be achieved when a single-mode DFB laser is modulated by an integrated quantum-confined Stark effect electroabsorptive modulator. The dynamic characteristics of such a device are simulated by a time domain, large signal dynamic model. The simulation demonstrates that the frequency chirp has two components: 1) changes of the refractive index induced by variation of the absorption coefficient during the modulation and 2) changes in the lasing frequency caused by changes in the effective residual facet reflection as the external modulator is switched on and off. Optimization by choice of the operating wavelength and coupling coefficient in the lasing section is discussed
Keywords :
chirp modulation; distributed feedback lasers; electro-optical devices; electro-optical modulation; electroabsorption; integrated optoelectronics; quantum confined Stark effect; refractive index; semiconductor device models; semiconductor lasers; simulation; 1.55 mum; absorption coefficient; coupling coefficient; dynamic characteristics; effective residual facet reflection; frequency chirp; gigabit/second integrated electroabsorptive modulator; high speed; integrated quantum-confined Stark effect electroabsorptive modulator; large signal dynamic model; lasing frequency; lasing section; low chirp; operating wavelength; optimization; refractive index; semiconductor 1.55 μm laser source; single-mode DFB laser; time domain; Absorption; Chirp modulation; Fiber lasers; Frequency; Laser modes; Laser transitions; Optical interferometry; Optical modulation; Phase modulation; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
