Title :
A 3.1–10.6 GHz Ultra-Wideband CMOS Low Noise Amplifier With Current-Reused Technique
Author :
Lin, Yi-Jing ; Hsu, Shawn S H ; Jin, Jun-De ; Chan, C.Y.
Author_Institution :
Electr. Eng. Dept., Nat. Tsinghua Univ., Hsinchu
fDate :
3/1/2007 12:00:00 AM
Abstract :
A 3.1-10.6 GHz ultra-wideband (UWB) low noise amplifier (LNA) utilizing a current-reused technique and a simple high-pass input matching network is proposed. The implemented LNA presents a maximum power gain of 16dB, and a good input matching of 50Omega in the required band. An excellent noise figure (NF) of 3.1-6dB was obtained in the frequency range of 3.1-10.6GHz with a power dissipation of 11.9mW under a 1.8-V power supply. The proposed UWB LNA demonstrates the highest power gain and lowest NF among the published works in 0.18-mum CMOS technology
Keywords :
CMOS integrated circuits; MMIC amplifiers; field effect MMIC; low noise amplifiers; ultra wideband technology; 0.18 micron; 1.8 V; 11.9 mW; 16 dB; 3.1 to 10.6 GHz; 3.1 to 6 dB; current-reused technique; high-pass input matching network; noise figure; ultra wideband CMOS low noise amplifier; Bandwidth; CMOS technology; Impedance matching; Low-noise amplifiers; Matched filters; Noise figure; Noise measurement; Performance gain; Radio frequency; Ultra wideband technology; Low noise amplifier (LNA); noise figure (NF); ultra-wideband (UWB);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.890503
