Title :
Demonstration of Sub-Millimeter Wave Fundamental Oscillators Using 35-nm InP HEMT Technology
Author :
Radisic, V. ; Mei, X.B. ; Deal, W.R. ; Yoshida, W. ; Liu, P.H. ; Uyeda, J. ; Barsky, M. ; Samoska, L. ; Fung, A. ; Gaier, T. ; Lai, R.
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA
fDate :
3/1/2007 12:00:00 AM
Abstract :
In this letter, 254-, 314-, and 346-GHz fundamental oscillators are demonstrated. These are the highest frequency oscillators using three-terminal devices reported to date. The performance is enabled through a 35-nm InP HEMT process with maximum frequency of oscillation (fmax) of 600GHz. These first-pass designs use coplanar waveguide (CPW) technology and include on-chip resonator and output matching. The maximum available gain (MAG) of these devices has been measured to be ~9.6dB at 200GHz
Keywords :
HEMT integrated circuits; III-V semiconductors; coplanar waveguides; indium compounds; resonators; submillimetre wave integrated circuits; submillimetre wave oscillators; 200 GHz; 254 GHz; 314 GHz; 346 GHz; 35 nm; 600 GHz; 9.6 dB; HEMT process; InP; coplanar waveguide; first-pass designs; high electron mobility transistor; on-chip resonator; output matching; submillimeter wave fundamental oscillators; three-terminal devices; CMOS technology; Capacitance; Coplanar waveguides; Frequency; HEMTs; Indium phosphide; Laboratories; MMICs; MODFETs; Oscillators; Coplanar waveguide (CPW); MM-wave; high electron mobility transistor (HEMT); monolithic microwave integrated circuit (MMIC); oscillator; sub-millimeter wave;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.890495
