A 0.6-V Low Power UWB CMOS LNA

Author

Yu, Yueh-Hua ; Chen, Yi-Jan Emery ; Heo, Deukhyoun

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei

Volume

17

Issue

3

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

229

Lastpage

231

Abstract

This paper presents the design of a low-power ultra-wideband low noise amplifier in 0.18-mum CMOS technology. The inductive degeneration is applied to the conventional distributed amplifier design to reduce the broadband noise figure under low power operation condition. A common-source amplifier is cascaded to the distributed amplifier to improve the gain at high frequency and extend the bandwidth. Operated at 0.6V, the integrated UWB CMOS LNA consumes 7mW. The measured gain of the LNA is 10dB with the bandwidth from 2.7 to 9.1GHz. The input and output return loss is more than 10dB. The noise figure of the LNA varies from 3.8 to 6.9dB, with the average noise figure of 4.65dB. The low power consumption of this work leads to the excellent figure of gain-bandwidth product (GBP) per milliwatt

Keywords

CMOS integrated circuits; MMIC amplifiers; low noise amplifiers; low-power electronics; ultra wideband technology; 0.18 micron; 0.6 V; 10 dB; 2.7 to 9.1 GHz; 3.8 to 6.9 dB; 4.65 dB; 7 mW; CMOS technology; MMIC; common-source amplifier; distributed amplifier; gain-bandwidth product; low power UWB CMOS LNA; ultra wideband low noise amplifier; Bandwidth; Broadband amplifiers; CMOS technology; Distributed amplifiers; Energy consumption; Frequency; Gain measurement; Low-noise amplifiers; Noise figure; Ultra wideband technology; Broadband; CMOS; distributed amplifier; low noise amplifier (LNA); low power; ultra-wideband (UWB);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.890502

Filename

4118228