Bias-dependence of the intrinsic element values of InGaAs/InAlAs/InP inverted heterojunction bipolar transistor

Author

Meskoob, Bahman ; Prasad, Sheila ; Vai, Mankuan ; Vlcek, James C. ; Sato, Hiroya ; Fonstad, Clifton G.

Author_Institution

Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA

Volume

40

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

1012

Lastpage

1014

Abstract

The small-signal S-parameters of an inverted InGaAs/InAlAs/InP heterojunction bipolar transistor are measured at 39 bias points covering the entire useful bias region. Small-signal model fitting is performed at each bias point. The results of the small-signal model fitting show that, in this device, it is sufficient to take five intrinsic elements of the model to be bias dependent. The methodology and the results of the simulations are presented

Keywords

III-V semiconductors; S-parameters; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; solid-state microwave devices; InGaAs-InAlAs-InP; heterojunction bipolar transistor; inverted HBT; simulations; small-signal S-parameters; small-signal model fitting; Electromagnetic heating; Gallium arsenide; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Materials science and technology; Microwave theory and techniques; Phased arrays; Scattering parameters;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.137411

Filename

137411