Title :
The effect of heavy metal contamination in SIMOX on radiation hardness of MOS transistors
Author :
Ipri, Alfred C. ; Jastrzebski, L. ; Peters, D.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
It is shown that heavy metal contamination introduced during implantation of oxygen into silicon results in a reduction of SIMOX (separation by implanted oxygen) oxide radiation hardness. Radiation-induced back-channel leakage currents in MOS transistors processed in SIMOX films containing various levels of heavy metals, as measured by surface photovoltage (SPV), are a strong function of heavy metal concentration. It is concluded that SPV measurements of as-implanted SIMOX wafers can be used as a rapid, nondestructive quality control inspection technique to predict the radiation hardness of the SIMOX oxide prior to processing.<>
Keywords :
inspection; insulated gate field effect transistors; ion implantation; radiation hardening (electronics); semiconductor technology; semiconductor-insulator boundaries; MOS transistors; O implantation; SIMOX; heavy metal concentration; heavy metal contamination; nondestructive quality control inspection; radiation hardness; radiation induced back channel leakage currents; separation by implanted oxygen; surface photovoltage; Annealing; Coatings; Iron; Leakage current; MOSFETs; Pollution measurement; Semiconductor films; Silicon; Surface contamination; Temperature;
Journal_Title :
Electron Device Letters, IEEE
