DocumentCode
1197162
Title
1/f noise sources
Author
Hooge, F.N.
Author_Institution
Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
Volume
41
Issue
11
fYear
1994
fDate
11/1/1994 12:00:00 AM
Firstpage
1926
Lastpage
1935
Abstract
This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an α value with a magnitude in the order of 10-4. Damaging the crystal has a strong influence on α, α may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The α values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices
Keywords
1/f noise; carrier mobility; semiconductor device models; semiconductor device noise; α value; 1/f noise sources; homogeneous semiconductor samples; mobility noise; number noise; semiconductor devices; theoretical models; Acoustical engineering; Conductors; Electron emission; Electron traps; Fluctuations; Noise generators; Noise measurement; Semiconductor device noise; Semiconductor device reliability; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.333808
Filename
333808
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