Extracting 1/f noise coefficients for BJT´s

Author

Costa, Julio C. ; Ngo, Dave ; Jackson, Robert ; Camilleri, Natalino ; Jaffee, James

Author_Institution

Semicond. Products Sector, Motorola Inc., Mesa, AZ, USA

Volume

41

Issue

11

fYear

1994

fDate

11/1/1994 12:00:00 AM

Firstpage

1992

Lastpage

1999

Abstract

We present a method for extracting the BJT SPICE noise model parameters AF and KF based on a general analysis of the small-signal equivalent circuit and the role of the internal BJT noise sources. The analysis is valid even for transistors with poor current gain and large base-collector conductance, for which the output noise characteristics may not be dominated by base flicker and shot noise. The method consists of interpreting the measured 1/f corner frequency versus DC current data in terms of the BJT´s internal noisy small signal equivalent circuit. Measured data is presented for an implanted-emitter and two polysilicon-emitter bipolar technologies

Keywords

1/f noise; bipolar transistors; equivalent circuits; semiconductor device models; semiconductor device noise; 1/f noise coefficients; BJT SPICE noise model parameters; Si; base flicker noise; implanted-emitter bipolar technology; internal BJT noise sources; parameter extraction; polysilicon-emitter bipolar technologies; shot noise; small-signal equivalent circuit; transistors; 1f noise; Circuit noise; Current measurement; Equivalent circuits; Frequency; Low-frequency noise; Noise level; Semiconductor device noise; Thermal loading; Thermal resistance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.333816

Filename

333816