DocumentCode :
1197258
Title :
Technique to improve linearity of transconductor with bias offset voltages controlling a tail current
Author :
Yamaguchi, I. ; Matsumoto, F. ; Noguchi, Y.
Author_Institution :
Dept. of Appl. Phys., Nat. Defense Acad., Kanagawa, Japan
Volume :
41
Issue :
21
fYear :
2005
Firstpage :
1146
Lastpage :
1148
Abstract :
Considering mobility degradation, a transfer characteristic of the transconductor using bias offset technique becomes nonlinear. Proposed is a technique to cancel the nonlinearity controlling a tail current. Using the proposed technique, the transconductance error is improved to 1/50 of that of the conventional circuit.
Keywords :
MOS analogue integrated circuits; current mirrors; bias offset voltage; mobility degradation; tail current; transconductance error; transconductor linearity; transfer characteristic;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20052731
Filename :
1522000
Link To Document :
بازگشت