Title :
Spectral and random telegraph noise characterizations of low-frequency fluctuations in GaAs/Al0.4Ga0.6As resonant tunneling diodes
Author :
Surya, Charles ; Ng, Sze-Him ; Brown, Elliott R. ; Maki, Paul A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
fDate :
11/1/1994 12:00:00 AM
Abstract :
The origin of low-frequency noise in resonant-tunneling diodes is investigated through spectral and time-domain characterizations over a wide range of temperatures and biasing conditions. The experiments were conducted on devices fabricated on GaAs/Al0.4Ga0.6As material system. Detailed analyses on the temperature and bias dependences of the random telegraph noise and Lorentzian structures in the noise power spectral densities showed that the low-frequency excess noise arises from hopping conduction of electrons from the emitter to the quasi-bound states in the quantum well. The capture of an electron by a trap in the energy barrier causes fluctuations in the transmission coefficient of the electron due to the modulation of the barrier potential
Keywords :
III-V semiconductors; aluminium compounds; electron traps; fluctuations; gallium arsenide; hopping conduction; resonant tunnelling diodes; semiconductor device models; semiconductor device noise; semiconductor quantum wells; GaAs-Al0.4Ga0.6As; LF noise; Lorentzian structures; RTD; barrier potential modulation; biasing conditions; energy barrier; hopping conduction; low-frequency excess noise; low-frequency fluctuations; noise power spectral densities; quantum well; quasi-bound states; random telegraph noise characterization; resonant tunneling diodes; spectral characterization; time-domain characterization; transmission coefficient; traps; Acoustical engineering; Conducting materials; Diodes; Electrons; Gallium arsenide; Low-frequency noise; Resonant tunneling devices; Telegraphy; Temperature distribution; Time domain analysis;
Journal_Title :
Electron Devices, IEEE Transactions on
