DocumentCode :
1197281
Title :
Frequency stabilisation of a GaAlAs semiconductor diode laser to an absorption line of water vapour at 822 nm
Author :
Ray, A. ; Bandyopadhyay, A. ; Ray, B. ; Ghosh, P.N.
Author_Institution :
Dept. of Phys., Univ. of Calcutta, India
Volume :
151
Issue :
6
fYear :
2004
Firstpage :
490
Lastpage :
495
Abstract :
An inexpensive GaAlAs single mode semiconductor diode laser operating in the 822 nm wavelength region is frequency stabilised at the line centre of a transition in the (2,1,1) vibration-rotation band of water vapour. A balanced photodetector is used for recording to improve the signal/noise (S/N) ratio. The laser frequency is locked at the line centre by using a simple current-feedback servocircuit. A long-term laser frequency stability of ∼4 MHz is attained, which is more than a hundred-fold improvement over the performance provided by the free running semiconductor diode laser. The corresponding Allan-variance measurement reaches σ(τ)=8.0 × 10-12 for an integration time of 100 s.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; laser frequency stability; laser mode locking; photodetectors; semiconductor lasers; 100 s; 822 nm; Allan-variance measurement; GaAlAs; GaAlAs semiconductor diode laser; current-feedback servocircuit; frequency stabilisation; laser frequency locking; line centre; photodetector; vibration-rotation band; water vapour absorption line;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2433
Type :
jour
DOI :
10.1049/ip-opt:20040733
Filename :
1374142
Link To Document :
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