DocumentCode :
1197295
Title :
Experiments on hot electron noise in semiconductor materials for high-speed devices
Author :
Bareikis, Vytautas ; Liberis, Juozapas ; Matulioniene, Ilona ; Matulionis, Arvydas ; Sakalas, Paulius
Author_Institution :
Semicond. Phys. Inst., Vilnius, Lithuania
Volume :
41
Issue :
11
fYear :
1994
fDate :
11/1/1994 12:00:00 AM
Firstpage :
2050
Lastpage :
2060
Abstract :
Experimental results on noise temperature and spectral density of current fluctuations (electron diffusion) at high electric fields in silicon, gallium arsenide, and indium phosphide are presented. The dominant noise sources are discussed in their relation to electron scattering mechanisms. Physical backgrounds of high speed-low noise performance (noise-speed tradeoff) are considered. Suppression in short samples of the fluctuations having long correlation time constant and (or) high threshold energy is discussed
Keywords :
carrier mobility; current fluctuations; high field effects; hot carriers; semiconductor device noise; GaAs; InP; Si; correlation time constant; current fluctuations; electron diffusion; electron scattering mechanisms; high electric fields; high-speed devices; hot electron noise; noise temperature; noise-speed tradeoff; semiconductor materials; spectral density; threshold energy; Circuit noise; Delay; Electrons; Fluctuations; Indium phosphide; Noise figure; Semiconductor device noise; Semiconductor devices; Semiconductor materials; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.333822
Filename :
333822
Link To Document :
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