DocumentCode
1197299
Title
Progress towards photonic crystal quantum cascade laser
Author
Walker, C.L. ; Farmer, C.D. ; Stanley, C.R. ; Ironside, C.N.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, UK
Volume
151
Issue
6
fYear
2004
Firstpage
502
Lastpage
507
Abstract
The work describes recent progress in the design, simulation, implementation and characterisation of photonic crystal (PhC) GaAs-based quantum cascade lasers (QCLs). The benefits of applying active PhC confinement around a QCL cavity are explained, highlighting a route to reduced threshold current operation. Design of a suitable PhC has been performed using published bandgap maps; simulation results of this PhC show a wide, high reflectivity stopband. Implementation of the PhC for the device is particularly difficult, requiring a very durable metallic dry etch mask, high performance dry etching and a low damage epilayer-down device mounting technique. Preliminary shallow etched PhC QCLs demonstrated the viability of current injection through the metal etch mask and the device mounting technique. Development of the etch mask and dry etching have demonstrated a process suitable for the manufacture of deep etched PhC structures. All the necessary elements for implementing deep etched PhC QCLs have now been demonstrated, allowing for the development of high performance devices.
Keywords
III-V semiconductors; etching; gallium arsenide; laser cavity resonators; masks; photonic band gap; photonic crystals; quantum cascade lasers; reflectivity; GaAs; QCL cavity; bandgap maps; current injection; deep etching; epilayer-down device mounting; metallic dry etch mask; photonic crystal quantum cascade laser; reflectivity stopband;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings -
Publisher
iet
ISSN
1350-2433
Type
jour
DOI
10.1049/ip-opt:20040806
Filename
1374144
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