Title :
Analytical and experimental studies of thermal noise in MOSFET´s
Author :
Tedja, Suharli ; Van der Spiegel, Jan ; Williams, Hugh H.
Author_Institution :
Pennsylvania Univ., Philadelphia, PA, USA
fDate :
11/1/1994 12:00:00 AM
Abstract :
An analysis of the channel thermal noise in MOSFET´s based on the one-dimensional charge sheet model, is presented. The analytical expression is valid in the strong, moderate, and weak inversion regions. The body effect on the device parameters relevant to the thermal noise is discussed. A measurement technique as well as experimental results of P- and N-MOSFET´s of a 1.2 μm radiation hard CMOS process are presented. The calculated channel thermal noise coefficient γ as in id2/Δf=4kT γ gdo, agrees well with experimental data for effective device channel length as short as 1.7 μm
Keywords :
MOSFET; inversion layers; radiation hardening (electronics); semiconductor device models; semiconductor device noise; thermal noise; 1.2 mum; 1.7 mum; MOSFETs; body effect; channel thermal noise; effective device channel length; inversion regions; measurement technique; one-dimensional charge sheet model; radiation hard CMOS process; Analytical models; CMOS technology; FETs; Integrated circuit noise; Low-frequency noise; MOS devices; MOSFET circuits; Noise reduction; Silicon; Thermal resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
