Title :
An Analysis of High-Power IGBT Switching Under Cascade Active Voltage Control
Author :
Wang, Yalan ; Palmer, Patrick R. ; Bryant, Angus T. ; Finney, Stephen J. ; Abu-Khaizaran, Muhammad S. ; Li, Gangru
Author_Institution :
Dept. of Eng., Univ. of Cambridge, Cambridge
Abstract :
A new gate-drive solution, cascade active voltage control (Cascade AVC), employs classic feedback-control methods with an inner loop controlling the insulated-gate bipolar-transistor (IGBT) gate voltage and an outer loop controlling the collector voltage, simultaneously. They make the switching performance less dependent on the IGBT itself. Feedback control of IGBTs in the active region does not necessarily slow the switching but introduces stability issues. A detailed stability analysis provides a sensible perspective to judge the system stability and justify the controller design, through considering major operating points and determining corresponding IGBT parameters. Experiments on high-power IGBTs including a 4500-V device show that Cascade AVC offers improved performance and is easier to design than the original AVC.
Keywords :
control system synthesis; driver circuits; feedback; insulated gate bipolar transistors; power semiconductor switches; stability criteria; voltage control; AVC design; cascade active voltage control; feedback-control method; gate-drive solution; high-power IGBT switching performance; insulated gate bipolar transistor; stability analysis; voltage 4500 V; Automatic voltage control; Control systems; Feedback control; Feedback loop; Industry Applications Society; Insulated gate bipolar transistors; Insulation; Power engineering and energy; Stability analysis; Voltage control; Cascade active voltage control (Cascade AVC); controlled switching; high-power insulated-gate bipolar transistor (IGBT); series connection; stability;
Journal_Title :
Industry Applications, IEEE Transactions on
DOI :
10.1109/TIA.2009.2013595