Title :
Influence of Al content x on hot electron noise in AlxGa 1-xAs n+nn+ devices: comparison with GaAs
Author :
De Murcia, Mario ; Richard, Edwis ; Vanbremeersch, Jacques ; Zimmermann, Jacques
Author_Institution :
Centre d´´Electron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
fDate :
11/1/1994 12:00:00 AM
Abstract :
Hot electron noise measurements are performed in Si doped Alx Ga1-xAs n+nn+ devices, for three different Al concentrations: x=0.15, 0.2, 0.25. Noise temperatures are obtained using a pulsed measurement technique as functions of electric field and frequency. Longitudinal diffusion coefficients D(E) are deduced at 4 GHz. Results are analyzed through the scattering mechanisms which greatly affect the electron velocity properties of AlxGa1-xAs materials. Comparisons with n+ nn+ GaAs devices are made
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; electric noise measurement; gallium arsenide; high electron mobility transistors; hot carriers; ohmic contacts; semiconductor device noise; silicon; white noise; 50 MHz to 4 GHz; AlxGa1-xAs:Si; AlGaAs; electric field; electron velocity properties; hot electron noise; longitudinal diffusion coefficients; n+nn+ devices; noise measurements; noise temperatures; pulsed measurement technique; scattering mechanisms; white noise; Electrons; Frequency; Gallium arsenide; Measurement techniques; Mechanical factors; Noise measurement; Performance evaluation; Pulse measurements; Scattering; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
