DocumentCode :
1197381
Title :
Thermal fluctuations in Y-Ba-Cu-O thin films near the transition temperature
Author :
Jiang, Sisi ; Hallemeier, Peter ; Surya, Charles ; Philips, J.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
Volume :
41
Issue :
11
fYear :
1994
fDate :
11/1/1994 12:00:00 AM
Firstpage :
2123
Lastpage :
2127
Abstract :
Detailed studies on the properties of low frequency noise in Y-Ba-Cu-O thin films in the transition region were conducted. Our experimental results showed that the low frequency excess noise exhibited a lower cutoff frequency of about 5 Hz, below which the noise power spectra were independent of frequency. At T close to TC and at small current biases the voltage noise power spectra were proportional to I2, (∂R/∂T)2 and inversely proportional to the volume of the device, Ω. In addition, low frequency noise measured from two segments separated by a distance of 300 μm was found to be correlated. The lower cutoff frequencies computed for both the noise power spectra and the frequency dependent correlation function, according to the thermal fluctuation model, were found to be in good agreement with the experimental values. The experimental results provide strong evidence that the low frequency excess noise in the device originates from equilibrium temperature fluctuations for small T and T≃TC
Keywords :
barium compounds; fluctuations in superconductors; high-temperature superconductors; superconducting device noise; superconducting thin films; superconducting transition temperature; thermal noise; yttrium compounds; 300 micron; 5 Hz; Y-Ba-Cu-O thin films; YBaCuO; cutoff frequency; equilibrium temperature fluctuations; excess noise; frequency dependent correlation function; low frequency noise; superconducting thin films; thermal fluctuations; transition temperature; voltage noise power spectra; Cutoff frequency; Fluctuations; Frequency dependence; Frequency measurement; Low-frequency noise; Noise measurement; Temperature; Transistors; Voltage; Yttrium barium copper oxide;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.333831
Filename :
333831
Link To Document :
بازگشت