DocumentCode
1197381
Title
Thermal fluctuations in Y-Ba-Cu-O thin films near the transition temperature
Author
Jiang, Sisi ; Hallemeier, Peter ; Surya, Charles ; Philips, J.M.
Author_Institution
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
Volume
41
Issue
11
fYear
1994
fDate
11/1/1994 12:00:00 AM
Firstpage
2123
Lastpage
2127
Abstract
Detailed studies on the properties of low frequency noise in Y-Ba-Cu-O thin films in the transition region were conducted. Our experimental results showed that the low frequency excess noise exhibited a lower cutoff frequency of about 5 Hz, below which the noise power spectra were independent of frequency. At T close to TC and at small current biases the voltage noise power spectra were proportional to I2, (∂R/∂T)2 and inversely proportional to the volume of the device, Ω. In addition, low frequency noise measured from two segments separated by a distance of 300 μm was found to be correlated. The lower cutoff frequencies computed for both the noise power spectra and the frequency dependent correlation function, according to the thermal fluctuation model, were found to be in good agreement with the experimental values. The experimental results provide strong evidence that the low frequency excess noise in the device originates from equilibrium temperature fluctuations for small T and T≃TC
Keywords
barium compounds; fluctuations in superconductors; high-temperature superconductors; superconducting device noise; superconducting thin films; superconducting transition temperature; thermal noise; yttrium compounds; 300 micron; 5 Hz; Y-Ba-Cu-O thin films; YBaCuO; cutoff frequency; equilibrium temperature fluctuations; excess noise; frequency dependent correlation function; low frequency noise; superconducting thin films; thermal fluctuations; transition temperature; voltage noise power spectra; Cutoff frequency; Fluctuations; Frequency dependence; Frequency measurement; Low-frequency noise; Noise measurement; Temperature; Transistors; Voltage; Yttrium barium copper oxide;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.333831
Filename
333831
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