Hall Effect Measurements at 33 GHz

One of the most useful methods of determining the electronic conduction properties of solid materials is the Hall effect. For high-resistivity low charge carrier mobility materials, a microwave measurement offers distinct advantages over dc and low frequency methods. The essential features of a sensitive apparatus employing a bimodal TE113 cavity for measurements at 33 GHz are reported, together with a review of the conditions under which the interpretation of the measurements in terms of a Hall mobility are valid. In order to obtain accurate determinations of permittivity, conductivity, and the charge carrier concentration, it is found that sample holder effects must be included in the relevant cavity perturbation formulas. Measurements on n-and p-type Si and GaP have been made and are in agreement with accepted results.