Simulation of the thermal response of self-heating power transistors using a time step adaption method

Author

Gjonaj, Erion ; Oestreich, Robert ; Weiland, Thomas

Author_Institution

Comput. Electromagn. Lab., Darmstadt Univ. of Technol., Germany

Volume

39

Issue

3

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

1211

Lastpage

1214

Abstract

An implementation of the Rosenbrock-Wanner scheme with embedded time-step adaption in the thermal simulation of AlGaAs-GaAs heterojunction bipolar transistors (HBT) is presented. The simulations are based on discrete 3-D models of the device using the finite integration technique for the solution of the thermal equation. The thermally coupled current response of the device in DC operation is obtained by a nonlinear EM₃ model. Several simulations featuring the thermal crosstalk and the current collapse instability demonstrates the utility of time-step adaption in simulating the alternating slow-fast transients in multifinger HBTs.

Keywords

III-V semiconductors; aluminium compounds; crosstalk; gallium arsenide; heterojunction bipolar transistors; integration; power bipolar transistors; semiconductor device models; simulation; stability; thermal analysis; transient analysis; AlGaAs-GaAs; AlGaAs-GaAs HBTs; DC operation; Rosenbrock-Wanner scheme; current collapse instability; discrete 3D models; embedded time-step adaption; finite integration technique; heterojunction bipolar transistors; multifinger HBTs; nonlinear EM₃ model; self-heating power transistors; thermal crosstalk; thermal equation; thermal simulation; thermally coupled current response; transients; variable time step; Couplings; Crosstalk; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Nonlinear equations; Power electronics; Power transistors; Thermal conductivity; Thermal resistance;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2003.810223

Filename

1198436