Title :
Dependence of electromigration noise on geometrical and structural characteristics in aluminum-based resistors
Author :
Chicca, S. ; Ciofi, C. ; Diligenti, A. ; Nannini, A. ; Neri, B.
Author_Institution :
Diparttimento di Ingegneria dell´´Informazione, Elletronica, Informatica, Telecomunicazioni, Pisa Univ., Italy
fDate :
11/1/1994 12:00:00 AM
Abstract :
Low frequency noise measurements have been performed on Al-Si resistors, subjected to high current density (j=2×106 A/cm2), in order to investigate the dependence of the electromigration noise on the structural and geometrical parameters. To this end five groups of samples have been used, each characterized by a different value of the average grain size D. The power spectral density Sv of the voltage fluctuations across the samples has been measured using test patterns with different widths ω and lengths l. It has been found that Sv shows an exponential dependence on the grain dimension and a linear dependence on the shape factor F=l/ω. The model previously proposed for noise generation has been integrated to take into account the observed dependence of Sv on D and F
Keywords :
aluminium alloys; current density; electromigration; electron device noise; fluctuations; grain size; silicon alloys; sputtered coatings; thin film resistors; Al-based resistors; AlSi; LF noise measurements; electromigration noise; exponential dependence; geometrical characteristics; grain dimension; grain size; high current density; linear dependence; model; noise generation; power spectral density; shape factor; structural characteristics; voltage fluctuations; Current density; Current measurement; Density measurement; Electromigration; Frequency measurement; Grain size; Low-frequency noise; Noise measurement; Performance evaluation; Resistors;
Journal_Title :
Electron Devices, IEEE Transactions on
