Title :
Charge transport and device parameters from noise measurements
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fDate :
11/1/1994 12:00:00 AM
Abstract :
A select number of examples where measurements of number fluctuation noise, carrier multiplication noise and velocity fluctuation noise can be used to determine electronic transport or device parameters are presented
Keywords :
1/f noise; electric noise measurement; fluctuations; photodetectors; resistors; semiconductor device noise; semiconductor device testing; semiconductor diodes; carrier multiplication noise; charge transport; device parameters; electronic transport; noise measurements; number fluctuation noise; velocity fluctuation noise; Charge measurement; Current measurement; Fluctuations; Frequency; Low-frequency noise; Microscopy; Noise generators; Noise measurement; Semiconductor device noise; Signal to noise ratio;
Journal_Title :
Electron Devices, IEEE Transactions on
