Title :
Reliability studies of Hf-doped and NH3-nitrided gate dielectric for advanced CMOS application
Author :
Yang, C.W. ; Fang, Y.K. ; Chen, S.F. ; Lin, C.S. ; Lin, C.Y. ; Wang, W.D. ; Chou, T.H. ; Lin, P.J. ; Wang, M.F. ; Hou, T.H. ; Yao, L.G. ; Chen, S.C. ; Liang, M.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
A novel technique is proposed for forming high-K dielectric of HfSiON by sequentially doping base oxide with Hf and nitridation with NH3. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared to conventional SiO2 gate dielectric at the same equivalent oxide thickness (EOT). Additionally, negligible flatband voltage shift is achieved with this technique. Excellent performances in electrical stressing are also demonstrated by the dielectric.
Keywords :
CMOS integrated circuits; dielectric thin films; hafnium compounds; integrated circuit reliability; nitridation; silicon compounds; Hf-doped gate dielectric; HfSiON; NH3; NH3-nitrided gate dielectric; advanced CMOS application; electrical stressing; equivalent oxide thickness; flatband voltage shift; gate dielectric; gate leakage; high-K dielectric films; nitridation; reliability studies; saturation drain current;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20041216
