Title :
Materials in semiconductor processing for high speed circuits: from electrical to optical circuits
Author :
Banerjee, I. ; Morse, M. ; Verdiell, J.-M. ; Docter, D.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
From the time in 1965 when ´Moore´s Law´ - doubling of circuit density every 18 months approximately was predicted, scaling of transistors has progressed in accordance with the law. This was primarily enabled by technological advances in manufacturing equipment that allowed the ´printing´ and manufacturing of smaller circuits. Occasionally, in-between, a new material was introduced in the manufacture of the circuits. However, from the 180 nm technology, new materials have been needed in every generation. As the circuit features get smaller, the necessity of new materials required becomes more apparent. The importance of these materials in the manufacturing of semiconductor devices will be illustrated in this paper along with some results.
Keywords :
high-speed integrated circuits; integrated circuit design; nanotechnology; semiconductor device manufacture; 180 nm; Moore Law; circuit printing; circuits manufacture; electrical circuit; high speed circuits; manufacturing equipment; nm technology; optical circuit; semiconductor devices manufacturing; semiconductor materials; semiconductor processing; transistors scaling;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20045049