Title :
Calculation of contact currents in device simulation
Author :
Nanz, Gerd ; Dickinger, Peter ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. Vienna, Austria
fDate :
1/1/1992 12:00:00 AM
Abstract :
The authors present an accurate new method for the calculation of the contact currents in a device simulation program which is applicable to arbitrarily shaped device geometries. The method is based on the evaluation of a volume integral of the calculated current densities over the whole device area with a suitably chosen weight function. Different types of weight functions are discussed and compared with the commonly used line integral along the contact. The results are illustrated by three examples: an I2L memory cell, an MOS transistor, and a resistor with a reverse-biased diode
Keywords :
current density; electric current; integral equations; semiconductor device models; I2L memory cell; MOS transistor; arbitrarily shaped device geometries; contact currents; current densities; device simulation; line integral; resistor; reverse-biased diode; simulation program; volume integral; weight functions; Boundary conditions; Current density; Differential equations; Diodes; Geometry; Integral equations; Laplace equations; MOSFETs; Resistors; Senior members;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
