A Near-Infrared Digital Camera in Polycrystalline Germanium Integrated on Silicon

Author

Colace, Lorenzo ; Masini, Gianlorenzo ; Cencelli, Valentino ; DeNotaristefani, Francesco ; Assanto, Gaetano

Author_Institution

Dept. of Electron. Eng., Univ. "Roma Tre", Rome

Volume

43

Issue

4

fYear

2007

fDate

4/1/2007 12:00:00 AM

Firstpage

311

Lastpage

315

Abstract

We report on the first silicon-integrated 2-D light-sensitive array equipped with complementary-metal-oxide-semiconductor addressing and readout electronics and operating in the near infrared. The chip includes 64 times 8 pixels, 64 analog-to-digital converters, cancellation circuitry for dark current, and facilities for test/calibration. We describe its architecture and fabrication, its electronic and optoelectronic characterization, as well as its operation as a near-infrared camera

Keywords

CMOS image sensors; calibration; cameras; digital photography; elemental semiconductors; germanium; germanium radiation detectors; infrared detectors; infrared imaging; integrated optics; integrated optoelectronics; readout electronics; silicon; 64 pixel; 8 pixel; Ge-Si; analog-to-digital converters; calibration; cancellation circuitry; complementary-metal-oxide-semiconductor addressing; dark current; digital camera; electronic characterization; near-infrared camera; optoelectronic characterization; polycrystalline germanium; readout electronics; silicon-integrated light-sensitive arrays; test facility; two-dimensional light-sensitive arrays; Analog-digital conversion; Calibration; Circuit testing; Dark current; Digital cameras; Germanium; Optical arrays; Optical device fabrication; Readout electronics; Silicon; CMOS integrated circuits; germanium radiation detectors; imaging; near infrared; optoelectronic devices; photodiodes; silicon optoelectronics;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2007.893001

Filename

4118376