Title :
Multiplication noise of wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodes
Author :
Campbell, J.C. ; Chandrasekhar, S. ; Tsang, W.T. ; Qua, G.J. ; Johnson, B.C.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
3/1/1989 12:00:00 AM
Abstract :
Measurements of InP/InGaAsP/InGaAs separate absorption, grading, and multiplication avalanche photodiode multiplication indicate that at high gains the excess noise factors approach values predicted by the conventional continuum theory. However, at lower gains the noise is suppressed. This is probably an artifact of the very thin multiplication layers which have been used to increase the gain-bandwidth product. From the frequency response of the noise power, a gain-bandwidth product of 60 GHz, which is consistent with the value of 57 GHz obtained directly from bandwidth measurements, is deduced.<>
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; gallium compounds; indium compounds; III-V semiconductors; InP-InGaAsP-InGaAs; avalanche photodiodes; gain-bandwidth product; gains; multiplication noise; thin multiplication layers; Absorption; Avalanche photodiodes; Bandwidth; Frequency measurement; Frequency response; Gain measurement; Indium gallium arsenide; Indium phosphide; Noise measurement; Power measurement;
Journal_Title :
Lightwave Technology, Journal of
