Title :
Modeling Effects of Random Rough Interface on Power Absorption Between Dielectric and Conductive Medium in 3-D Problem
Author :
Gu, Xiaoxiong ; Tsang, Leung ; Braunisch, Henning
Author_Institution :
Dept. of Electr. Eng., Univ. of Washington, Seattle, WA
fDate :
3/1/2007 12:00:00 AM
Abstract :
We study the effects of a random rough surface on the power absorption between a dielectric and conductive medium in a 3-D configuration where the surface height varies in both horizontal directions. The analytic small perturbation method of second order and numerical T-matrix method are used. The absorption depends on the root mean square height, correlation length, and correlation function of the random rough surface. A closed-form expression of power absorption enhancement factor is obtained from small perturbation method of second order. Results show that the T-matrix method agrees with the small perturbation method for rough surfaces with a small slope. We further compare the 3-D results to the previous 2-D results and show significant difference. The power absorption enhancement factor exhibits saturation for the Gaussian correlation function, but not for the exponential correlation function
Keywords :
conducting materials; dielectric materials; integrated circuit interconnections; perturbation theory; surface roughness; Gaussian correlation function; conductive medium; correlation length; dielectric medium; exponential correlation function; numerical T-matrix method; perturbation method; power absorption enhancement factor; random rough interface; random rough surface; root mean square height; surface height; Absorption; Adhesives; Conducting materials; Conductivity; Conductors; Dielectrics; Packaging; Perturbation methods; Rough surfaces; Surface roughness; Perturbation methods; power absorption; rough surfaces; t-matrix method;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2007.891689